SILICON WAFERS
MIRROR-POLISHED SILICON WAFERS
| Parameter | Value | |||
|---|---|---|---|---|
| Diameter, mm | 150 | 100 | 76.2 | 50.8 |
| Diameter tolerance, mm (standard/minimum) | ±0.2/±0.1 | ±0.5/±0.1 | ±0.5/±0.1 | ±0.4/±0.1 |
| Thickness, µm (standard/minimum) | 675/350 | 525/300 | 380/200 | 275/150 |
| Thickness tolerance, µm (standard/minimum) | ±15/±5 | |||
| TTV, µm (standard/minimum) not more | 10/2 | 10/2 | 10/1 | 10/5 |
| Warp, µm (standard/minimum) not more | 40/10 | 40/10 | 30/5 | 30/5 |
| Front side particles, (0.3 µm) not more | 10 | 5 | 5 | 5 |
| Flats as per SEMI or customer's order | ||||
AS-LAPPED SILICON WAFERS FOR DESCRETE DEVICE
| Parameter | Value | ||||||
|---|---|---|---|---|---|---|---|
| Diameter, mm | 34 | 42 | 50 | 63.5 | 76.2 | 100 | 150 |
| Minimum thickness, µm | 150 | 200 | |||||
| Thickness tolerance, µm | ±10 | ±12 | |||||
| TTV (std/min), µm not more | 2/1 | ||||||
| Warp (std/min), µm not more | 15/12 | 20/12 | 30/15 | 35/20 | 35/20 | ||
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Thermal Oxide, LTO (Low Temperature Oxide), PSG (Phosphorous Doped Oxide), TEOS Oxide, Plasma Oxide, Plasma Nitride, LPCVD Silicon Nitride, Polysilicon, Photolithography, Photoresist Coating, and other...
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