SOLAR CELL TESTER
The tester is designed for terrestrial solar cell incoming/outcoming inspection with the
purpose of checking and optimizing parameters and preventing manufacture defects of solar modules.
Solar cells are not heated in process of inspection due to the use of xenon pulse lamp installed in the tester.
The tester is PC controlled and enables to select inspection options ranging from simple check in a particular I-V curve point up to full I-V curve recording and statistical processing of measurement results.
The tester can be involved into automatic testing/sorting station.
|Light flux intensity adjustment range, W/m2||600 - 1200|
|Unevenness light flux during one measurement, %||1|
|Uniform illumination field with uneven 1%, mm||150х150|
|Spectrum of light||AM 1.5
class B (IEC 904-9)
|Measured voltage range, V||-1,5 - +1,5|
|Voltage measurement accuracy with open circut voltage range 0,5 - 1,0 V||± 1%|
|Voltage measurement discreteness, mV||0,3|
|Measured current range, A||0 - 8,0|
|Current measurement accuracy with short circut current range 0,7 - 5,0 A||± 1%|
|Current measurement discreteness, mA||1,3|
|Light impulse duration, ms||< 10|
|Supported table temperature, °C||25 ±0,5|
The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality.
Lifetime determination is based on measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.
|Laser LED parameters:|
|wave length, nm||975|
|power adjustment range at measurement zone, mW||50 - 500|
|impulse length adjustment range, µs||2 - 64|
|Microwave generator frequency, GHz||10|
|Measured object size:|
|height, mm||< 210|
|width, mm||< 210|
|length, mm||160 - 300|
|Measurement minimal step, mm||1|
|Resistivity, Ohm·cm||0,5 - 12|
|Measured lifetime range, µs||0,8 - 300|
|Consumed power (230V, 50Hz), W||< 100|
|Dimensions, mm||365 x 645 x 565|
CONTACTLESS RESISTIVITY TESTER FOR SEMICONDUCTOR INGOTS TRM 0,1/100i
The Contactless Resistivity Tester is a device meant for testing electrical resistance on flat and bubble surfaces of semiconductor ingots. Measuring of the resistivity of the silicon ingots is based on the determination of magnetic energy power losses caused by eddy currents inside the ingot.
It enables repidity and contactlessness of measurement and does not require special surface treatment before measurement.
|Measured resistivity range, Ohm·cm||0,001 - 100|
|Measurement duration, s||2|
|Minimal size of measured surface, mm||30x30|
relative humidity, %
atmospheric pressure, kPa
86 - 106
|Consumed power (220V, 50Hz), W||<= 5|
|Dimensions (without probe), mm||280x200x60|